Found a total of 10000 related content
What is a flash drive
Article Introduction:A flash drive is a miniature high-capacity mobile storage product that does not require a physical drive. The storage medium it uses is flash memory. The flash drive has two main uses: 1. It can be used to exchange files larger than 1.44MB between computers that are not connected to the Internet; 2. It can be used to replace the floppy drive on a laptop.
2021-02-19
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Huawei releases two new all-flash products to promote flash storage in all scenarios
Article Introduction:According to news from this site on November 16, this site learned from Huawei’s official website that at today’s Huawei All-Connect Conference 2023 in Paris, Huawei Director and President of ICT Products and Solutions Yang Chaobin officially released two new all-flash products, OceanStorPacific9920 and OceanStorDorado2100, to firmly promote All-scenario flash storage helps customers build more efficient and reliable data centers. Yang Chaobin, Director of Huawei and President of ICT Products and Solutions (Source: Huawei official website) Yang Chaobin pointed out: “While large-scale and large-capacity networks fully release computing power, ubiquitous data services also require higher performance, more reliability, and more Green and energy-saving data storage. Compared with mechanical hard drives, flash memory storage has better performance, reliability, and power consumption.
2023-11-18
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闪迪 2024 新品媒体分享会举办 实力打造闪存存储超一流品牌
Article Introduction:随着数字经济时代的迅猛发展,数字内容已经成为个人消费者的核心资产之一,因此存储就成为绕不开的话题。5月21日,全球领先的存储品牌西部数据旗下子品牌(SanDisk)举办了2024新品媒体分享会,成为传递现代存储设备技术发展动向的重要窗口。作为现代先进的存储产品,以闪存(NANDFLASH)为核心的各类固态驱动器(SSD),不断拓展容量、速度与效率的边界。作为最早耕耘存储领域的品牌之一,闪迪在1994年就推出世界首款CF存储卡,宣告影像正式进入数字时代。目前在闪迪旗下的产品线更为丰富,除了各类存储卡、闪存盘
2024-05-22
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Which is better, Kingston memory card or SanDisk memory card?
Article Introduction:When buying memory modules, many users will be confused about which brand is better. Many of them will be confused about which brand is better between Kingston and SanDisk. At present, both manufacturers have corresponding advantages. . Which one is better, Kingston memory card or SanDisk memory card? Answer: Both brands have their own advantages. It depends on personal preference. But if you want something cheaper, you can choose Kingston. If you want good after-sales service support, you can choose SanDisk. 1. Usage environment SanDisk is anti-vibration, anti-magnetic, waterproof, heat-resistant, cold-resistant, and impact-resistant. Kingston is waterproof, resistant to high and low temperatures, impact-resistant, and anti-vibration. There is not much difference between the two. 2. Speed: The continuous reading speed of the two cards is almost the same. The continuous writing speed of the SanDisk is twice as fast, while the Kingston is slightly inferior. 3. Development History 1. SanDisk started from 1
2024-02-03
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Kioxia aims to launch 1,000-layer NAND flash memory in 2031 to reorganize storage-class memory business
Article Introduction:According to the Nikkei xTECH report, Kioxia CTO Hideshi Miyajima said at the recent 71st Spring Academic Lecture of the Japan Society of Applied Physics that the company aims to launch 1000-layer 3D NAND flash memory in 2030~2031, and to storage-level memory ( SCM) business was restructured. Kioxia and Western Digital work together to develop NAND flash memory technology. Currently, the most advanced product of these partners is the 218-layer stacked BICS83D flash memory. BICS8 flash memory can achieve an I/O rate of 3200MT/s. In 2022, another major NAND company demonstrated a similar view at Technology Day. It is predicted that by 2030, they plan to achieve 1,000-layer stacked 3D NAND storage. Increase the number of stacking layers
2024-04-07
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Yangtze Memory QLC flash memory X3-6070 has a write and erase life of 4,000 times, catching up with TLC products
Article Introduction:News from this site on March 28, according to Taiwanese media DIGITIMES, Yangtze Memory stated at the China Flash Memory Market Summit CFMS2024 that the X3-6070QLC flash memory using third-generation Xtacking technology has achieved a P/E endurance of 4,000 times. Note from this site: Different from the warranty life, consumer-grade original TLC solid-state drives generally have at least 3,000 P/E-level erase and write life in tests. ▲Image source China Flash Memory Market Summit CFMS official, the same below Huo Zongliang, CTO of Yangtze Memory, said that the NAND flash memory industry has passed the most difficult year of 2023 and will enter a rising period this year. It is expected that the total flash memory demand will grow at a compound rate from 2023 to 2027. The rate can reach 21%, and the average capacity of a single device is
2024-03-28
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Entering a new era of storage! SK Hynix announces mass production of 321-layer ultra-high-level flash memory in 2025
Article Introduction:According to news on August 21, NAND flash memory technology has made another major breakthrough recently, opening a new chapter in the storage field. According to industry sources, the world's major storage manufacturers are competing to launch ultra-high-level flash memory products, triggering new industry expectations for storage density and performance. SK Hynix recently announced the launch of an impressive 300+ layer flash memory, marking a huge advancement in NAND flash memory technology in terms of stacking layers. This flash memory has an astonishing 321 layers, uses TLC technology, and the capacity of a single Die is up to 1Tb (128GB). However, this product will not be mass-produced until 2025. Samsung is not to be outdone. According to Korean media, they plan to launch their own 300+ layer flash memory products in 2024, striving to be one step ahead.
2023-08-22
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What is a USB flash drive
Article Introduction:USB flash drive is a miniature high-capacity mobile storage product that uses a USB interface and does not require a physical drive. It is connected to the computer through the USB interface to achieve plug-and-play. USB is the abbreviation of Universal Serial Bus.
2020-10-19
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Maybe Apple iPhone 16 Pro 1TB uses slow QLC flash technology
Article Introduction:Thanks to netizen Wu Yanzu from South China for submitting the clue! According to DigiTimes reports on January 17, in order to reduce costs, the iPhone 16 Pro series models equipped with 1TB storage may use QLCNAND flash memory with slower read and write speeds. Note that Apple currently uses the more expensive TLCNAND flash memory on the iPhone. The advantage of QLC flash memory is that more storage can be crammed into a smaller space and the cost is lower, but the disadvantage is that read and write speeds are slower, and the durability and reliability are lower than TLC flash memory. Of course, Apple can mitigate these issues through specific optimizations. The report also said that the use of QLC flash memory may make it possible to launch an iPhone with 2TB storage for the first time. Currently, i
2024-01-17
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SanDisk USB flash drive, your reliable choice for mobile storage
Article Introduction:SanDisk is a well-known storage device brand in the world, and SanDisk USB flash drives have won the favor of countless users with its excellent performance and excellent quality. This article will comprehensively introduce the characteristics, usage and purchase suggestions of SanDisk USB flash drives to protect your data storage. Tool materials: System version: Windows 11/macOS Monterey Brand model: SanDisk Extreme G2256GB Software version: SanDisk Secure Access 3.02 1. Features of SanDisk USB flash drive 1. High-speed transmission: Using USB3.2Gen1 technology, the reading speed is up to 420MB/s. It is more than 5 times that of ordinary USB flash drives, which greatly improves data transmission efficiency. 2. Security encryption: built-in SanDiskSe
2024-04-17
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How to solve the problem of insufficient memory when playing games in Windows 10?
Article Introduction:How to solve the problem of insufficient memory when playing games in Windows 10? When we use win10 system to play games, we will encounter a crash and a prompt of insufficient memory, so what should we do? Users can directly open the advanced system settings under properties. Let this site give users a detailed introduction to the analysis of the problem of insufficient memory when playing games in Win10. Analysis of the problem of insufficient memory when playing games in Windows 10 1. First, right-click This Computer on the desktop, and then open Properties. 2. Click "Advanced System Settings" on the left taskbar. 3. In the Settings taskbar, click Advanced Options and then click Settings in the lower right corner. 4. After entering settings, select the advanced taskbar and then change virtual memory.
2024-03-17
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SanDisk announces the launch of 1.5TB microSD memory card with amazing storage capacity
Article Introduction:According to news on September 28, SanDisk recently announced that it will launch a microSD memory card with a capacity of up to 1.5TB on October 16, priced at US$149 (approximately RMB 1,089), equivalent to 100GB of storage space. Only $10. This card will be a rare choice for users who need large storage capacity. SanDisk's 1.5TB microSD memory card has a wide range of applications and can be used in tablets, smartphones, laptops and other microSDXC-compatible devices. equipment. However, it should be noted that not all smartphones and tablet devices can support this memory card, because the storage expansion limit of most devices is usually 512GB or 1T
2023-09-29
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SK Hynix releases 321-layer flash memory to improve storage efficiency and lead a new era
Article Introduction:South Korean semiconductor giant SK Hynix announced a major breakthrough on August 9, successfully releasing a new 321-layer 1Tb TLCNAND flash memory, making it the first company in the world to officially develop more than 300 layers of NAND flash memory. SK Hynix has achieved great results in the field of NAND flash memory. Their breakthrough technological achievement is the 321-layer 1TbTLCNAND, which has an efficiency improvement of an astonishing 59% compared to the previous generation of 238-layer 512GbNAND. By increasing the number and layers of memory cells in each chip, SK Hynix has successfully achieved greater storage capacity, not only increasing the storage capacity of a single chip but also effectively increasing the throughput of chips on each wafer. Lux plans to start mass production of this model in the first half of 2025
2023-08-12
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Meizu 20 Classic mobile phone flash memory specifications adjusted from UFS 4.0 to UFS 3.1
Article Introduction:Thanks to netizen Bang Candy for submitting the clue! According to news on May 6, some netizens recently discovered that the flash memory of the Meizu 20 Classic mobile phone they purchased was changed from UFS4.0 to UFS3.1. Friends said that the customer service of Meizu JD.com’s self-operated flagship store confirmed the change. The customer service of Meizu’s self-operated flagship store on JD.com said: “Due to the adjustment of the production process, the flash memory specifications of Meizu 20 Classic produced after April 29, 2024 (inclusive) will be adjusted to UFS3.1.” When I asked the relevant customer service, I got the same answer. Answered and stated that "all the memory (expected to refer to "flash memory") of this model has been replaced." For products after replacing UFS3.1 flash memory, the packaging box configuration information of Meizu 20Classic will be in 256
2024-05-06
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Samsung's 280-layer stacked QLC flash memory technology opens a new era of storage
Article Introduction:Samsung recently revealed that they are actively developing the next generation V9QLC flash memory technology. This technology will enable stacking of up to 280 layers and is expected to be officially launched within this year. This technological innovation will significantly increase storage capacity and performance. It is reported that the storage density of Samsung's V9QLC flash memory technology will reach an astonishing 28.5Gb per square millimeter, which is an increase of up to 36% compared to the 20.62Gb of Yangtze Memory's 232-layer QLC technology currently leading on the market. At the same time, other competitors’ QLC solutions pale in comparison in terms of storage density, such as Micron’s 232-layer solution at 19.5Gb, SK Hynix’s 176-layer solution at 14.4Gb, and Western Digital/KioXia’s 162-layer solution at 13.86 Gb. This shows
2024-01-30
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The computer flickers on and off when turned on and cannot be started.
Article Introduction:The computer's power-on button keeps flashing and cannot be turned on. 1. The reasons why the computer's power-on button keeps flashing and cannot be turned on include: poor power contact, implanted Trojan horse program, loose memory module, too many startup items, and the power cord is not original, etc. 2. It may be caused by the following reasons: Power failure: The power supply may fail, causing the computer to fail to start normally. You can try to replace the power supply or check whether the power cord is firmly connected. Memory problems: The memory may be malfunctioning, preventing the computer from starting properly. You can try to replace the memory module or re-plug the memory module. 3. The computer host’s power-on button flashes and cannot be turned on: When the host is in standby mode, the power indicator light will flash one after another. 4. The reasons why the computer power button flashes and cannot be turned on are: power supply problems, graphics card problems, memory problems, hard disk problems, main
2024-03-28
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Sources say Samsung Electronics will mass-produce 9th generation V-NAND flash memory as soon as later this month
Article Introduction:According to news from this site on April 12, Korean media Hankyung reported that Samsung will achieve mass production of 9th generation V-NAND flash memory as soon as later this month. Samsung executive Jung-Bae Lee said in October last year that its next-generation NAND flash memory will be mass-produced "early this year" and will have an industry-leading number of stacking layers. Samsung mass-produced 236-layer 8th-generation V-NAND in November 2022, which means that the interval between the two generations is about a year and a half. ▲Samsung’s 8th generation V-NAND flash memory Hankyung said that the number of stacking layers of the 9th generation V-NAND flash memory will be 290. However, earlier reports on this site mentioned that Samsung demonstrated a 280-layer stacked QLC flash memory at an academic conference. , the flash IO interface rate reaches 3.2G
2024-04-12
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Huawei releases its latest distributed storage all-flash product OceanStor Pacific 9920
Article Introduction:At the Data Storage User Elite Forum held in Xining, Huawei launched a new distributed storage all-flash product - OceanStorPacific9920 on August 25. The release of this product has attracted widespread attention in the industry. It is understood that OceanStorPacific9920 is an excellent all-flash product that performs well in terms of performance. Its single-node bandwidth reaches an astonishing 20GB/s, and the number of input/output operations per second (IOPS) is as high as 800,000. This makes OceanStorPacific9920 a dazzling star in the storage field. Compared with traditional mechanical hard disks (HDD), solid-state drives (SSD) have better performance in IOPS, low latency and throughput.
2023-09-06
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Micron announces the industry's first 232-layer QLC flash memory and simultaneously releases 2500 SSD
Article Introduction:According to news from this site on April 17, Micron announced that it was the first in the industry to launch 232-layer QLCNAND flash memory. This flash memory has been used in specific Yingruida solid-state products on the consumer retail side. It has been sampled with 2500 solid-state drives on the consumer OEM side and has begun mass production for storage companies on the enterprise side. Micron said that its 232-layer QLC has a flash memory I/O rate of 2400MT/s, which is 50% higher than its previous generation 176-layer QLC flash memory. At the same time, the read performance and programming performance have also improved by 24% and 31% respectively. Micron also claims that the flash memory has a 28% bit density advantage over many competitors' QLC products. Micron also simultaneously released the 2500 solid-state drive using 232-layer QLC flash memory. The solid hard
2024-04-17
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Samsung is developing CMM-H hybrid memory module: simultaneously connecting DRAM memory and NAND flash memory through CXL technology
Article Introduction:According to news from this site on March 21, according to the China Flash Memory Market Summit 2024 briefing released by Samsung Semiconductor’s WeChat public account, it is developing CMM-H hybrid storage CXL modules. The module contains both DRAM memory and NAND flash memory. Note from this site: As a new high-speed interconnection technology, CXL can provide higher data throughput and lower transmission delay, and can establish efficient connections between the CPU and external devices. According to the diagram provided by Samsung, this module can directly transmit block I/O between the flash memory part and the CPU through the CXL interface, and can also realize 64-byte memory I/O transmission through the DRAM cache and CXL interface. The CMM-H module enables fine-grained access, lowering TCO, and is also a possible persistent memory option. According to Samsung
2024-03-22
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