Entering a new era of storage! SK Hynix announces mass production of 321-layer ultra-high-level flash memory in 2025

News on August 21, recently, NAND flash memory technology has made another major breakthrough, opening a new chapter in the storage field. According to industry sources, the world's major storage manufacturers are competing to launch ultra-high-level flash memory products, triggering new industry expectations for storage density and performance.

SK Hynix recently announced the launch of an eye-catching 300-layer flash memory, marking a huge progress in the number of stacking layers of NAND flash memory technology. This flash memory has an astonishing 321 layers, uses TLC technology, and the capacity of a single Die is up to 1Tb (128GB). However, this product will not be mass-produced until 2025.

Samsung is not to be outdone. According to Korean media, they plan to launch their own 300-layer flash memory products in 2024, striving to be one step ahead. Although the details of Samsung’s flash memory have not yet been made public, what is certain is that the product still uses dual-stack technology and has made a series of innovations in details.

It is worth mentioning that in addition to the increase in the number of layers, the flash memory capacity is also constantly setting new records. Samsung recently announced an enterprise-class SSD up to 256TB, using QLC technology to meet the enterprise market's demand for large-capacity storage. In addition, they are also actively developing PB-level SSDs, and it is expected that storage capacities of more than 1,000TB will become a reality in the near future

The editor understands that the continued innovation of NAND flash memory technology will have a profound impact on the field of data storage and processing Tremendous influence. With the advancement of technology, the capacity of storage devices will increase and the speed will be faster, providing more powerful support for various application scenarios

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