Samsung's 280-layer stacked QLC flash memory technology opens a new era of storage

Samsung recently revealed that they are actively developing the next generation V9 QLC flash memory technology. This technology will enable stacking of up to 280 layers and is expected to be officially launched within this year. This technological innovation will significantly increase storage capacity and performance.

It is reported that Samsung V9 The storage density of QLC flash memory technology will reach an astonishing 28.5Gb per square millimeter, which is an increase of up to 36% compared to the 20.62Gb of the current market-leading Yangtze Memory 232-layer QLC technology. At the same time, other competitors’ QLC solutions pale in comparison in terms of storage density, such as Micron’s 232-layer solution at 19.5Gb, SK Hynix’s 176-layer solution at 14.4Gb, and Western Digital/KioXia’s 162-layer solution at 13.86 Gb. This significant advantage means that based on V9 SSDs with QLC technology will theoretically be able to achieve ultra-high capacities of 8TB on one side and 16TB on double sides. Of course, the capacity of the final product needs to be adjusted according to market demand.

In terms of performance, Samsung V9 QLC flash technology also performs well. According to the editor's understanding, its maximum transmission rate can reach 3200MT/s, which is a level higher than the current highest 2400MT/s on the market. This performance can even meet the requirements of future PCIe The demand for the 6.0 solution shows strong foresight. However, QLC solutions often rely on pSLC buffering technology in practical applications, requiring part of the capacity to be used as cache, so its actual performance remains to be seen. Nonetheless, as the potential of TLC technology is gradually exhausted, QLC has become the mainstream choice in the market. Various manufacturers have turned to QLC technology one after another, and Samsung has also invested its main energy in the research and development of QLC technology since 2022.

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