Sources say Samsung Electronics will mass-produce 9th generation V-NAND flash memory as soon as later this month

News from this site on April 12, according to Korean media Hankyung, Samsung will achieve mass production of 9th generation V-NAND flash memory as soon as later this month.

Samsung executive Jung-Bae Lee said in October that its next-generation NAND flash memory will be mass-produced "early this year" and have an industry-leading number of stacking layers.

Samsung mass-produced 236-layer 8th-generation V-NAND in November 2022, which means the gap between the two generations is about a year and a half.

Hankyung said that the number of stacking layers of the 9th generation V-NAND flash memory will be 290, but this time Earlier reports from the website mentioned that Samsung demonstrated a 280-layer stacked QLC flash memory at an academic conference, and the flash memory IO interface rate reached 3.2GB/s.

Samsung will continue to use the structure of dual flash memory stacks on the 9th generation V-NAND to achieve simpler processes and lower manufacturing costs. Samsung will switch to a three-stack structure for the 10th generation V-NAND flash memory expected to be launched next year.

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