It is reported that Samsung Electronics has established a 1dnm DRAM memory technology development team in advance to rebuild its advantages.

According to news from this website on May 9, Korean media Sedaily quoted industry sources as saying that Samsung Electronics recently decided to form a technology development team for 1dnm DRAM memory.

The latest process in the DRAM memory industry is the fifth-generation process of the 10 nm series, namely 1bnm;

The next-generation DRAM of the three major memory manufacturers - Samsung Electronics, SK Hynix and Micron The 1cnm process will be put into mass production from the third quarter of this year to next year;

and the 1dnm process is after 1cnm, and the mass production time is expected to be later than 2026.

When Samsung Electronics develops each generation of DRAM process, it generally does not form a comprehensive team including semiconductor and process engineers until the PA (Note of this site: Process Architecture, process architecture) stage close to mass production. The main task of this team is to optimize and adjust process parameters to improve chip performance and reliability. At the same time, they are also responsible for solving various problems and problems encountered during the manufacturing process to ensure that products can be delivered to the market on time.

On the 1dnm node, the team was convened 1 to 2 years earlier, and the current size of the team is around a few hundred people.

Compared with the current process, the 1dnm process will increase the amount of EUV lithography, making it more difficult. Samsung Electronics has established a 1dnm DRAM technology development team in advance to accelerate mass production preparations and shorten the process optimization cycle.

Since 2020, Samsung Electronics has struggled to maintain its lead in DRAM memory technology:

At the 1anm node, Micron took the lead in mass production; when it came to 1bnm, the three companies took the lead in mass production Roughly the same; and in the upcoming 1cnm node, SK Hynix is ​​expected to take the lead.

On the product side, due to the previous wrong decision to disband the HBM memory R&D team, Samsung Electronics is currently lagging behind in the competition of HBM3 (E) memory.

Samsung Electronics hopes to stop the current decline by increasing human resource investment in 1dnm DRAM development in advance, re-establish its memory technology advantages, and promote HBM business development through DRAM technology upgrades.

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