High-speed reading and writing, low latency: Transcend Technology releases UTE210T U.2 NVMe SSD

According to news on July 7, Transcend Technology recently released a new U.2 NVMe SSD product, named "UTE210T". This product is designed for users with generative artificial intelligence, high-performance computing (HPC) and big data analysis needs. According to Transcend, UTE210T uses advanced 112-layer 3D NAND flash technology, equipped with an 8-channel controller and PCIe Gen 4x4 interface, delivers outstanding performance.

UTE210T has a sequential read speed of up to 7200 MB/s and a sequential write speed of up to 6500 MB/s, while supporting up to 1 million random read and write IOPS. This makes it excellent at handling large data sets and complex computing tasks. In addition, UTE210T also features low power consumption, low latency and high reliability, providing users with an excellent user experience.

This product is NVMe compliant 1.4 specification and adopts U.2 interface, which not only enhances transmission stability but also ensures the integrity of the server. UTE210T is also optimized for demanding workloads related to artificial intelligence. By improving the design of DRAM, it reduces the program/erase cycle (P/E cycle) of NAND flash memory, effectively extending the service life of the SSD.

According to the editor’s understanding, UTE210T is not only suitable for artificial intelligence and big data applications, but also widely used in cloud computing, video surveillance, games, medical and other fields. Users can choose the appropriate capacity from 512GB to 8TB based on their personal needs.

Transcend Technology has not announced the pricing information of UTE210T, but it is expected to meet the needs of users in different industries through its excellent performance and reliability. This new U.2 NVMe SSD products will provide users with faster and more reliable storage solutions when processing large-scale data and complex computing tasks, helping various industries achieve more efficient work and innovation.

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