STMicroelectronics announces collaboration with Samsung to launch 18nm FD-SOI process to support embedded PCM

According to news from this site on March 21, STMicroelectronics announced that it will jointly launch the 18nm FD-SOI process with Samsung. The process supports embedded phase change memory (ePCM).

FD-SOI, short for fully depleted silicon-on-insulator, is a planar semiconductor process technology that achieves excellent leakage current control through simple manufacturing steps.

STMicroelectronics stated that compared with the 40nm eNVM technology it currently uses, the 18nm FD-SOI process using ePCM has been significantly improved Performance parameters : It has improved energy efficiency by 50%, increased digital density by 3 times, can accommodate larger on-chip memory, and has a lower noise figure.

At 3V, this process can provide a variety of analog functions, such as power management and reset systems. This is the only technology below the 20nm process to support these functions.

At the same time, the new 18nm FD-SOI process also has excellent performance in high temperature resistance and radiation resistance, and can be used in demanding industrial applications.

STMicroelectronics’ first STM32 MCU based on this process will begin sampling to selected customers in the second half of the year, and is planned to be mass produced in the second half of 2025.

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