igbt is an insulated gate bipolar transistor electronic component; igbt is a composite fully controlled voltage-driven power semiconductor device composed of a bipolar transistor and an insulated gate field effect transistor, and has high input impedance With the advantages of low conduction voltage drop and low conduction voltage drop, the igbt module has the characteristics of energy saving, convenient installation and maintenance, and stable heat dissipation.
The operating environment of this tutorial: Windows 10 system, DELL G3 computer.
IGBT is an insulated gate bipolar transistor electronic component
IGBT (Insulated Gate Bipolar Transistor), Insulated Gate Bipolar Transistor Polar transistor is a composite fully controlled voltage-driven power semiconductor device composed of (Bipolar Junction Transistor, BJT) bipolar triode and insulated gate field effect transistor (Metal Oxide Semiconductor, MOS). It has both (Metal-Oxide -Semiconductor Field-Effect Transistor, MOSFET) has the advantages of high input impedance of metal oxide semi-field effect transistor and low conduction voltage drop of power transistor (Giant Transistor, GTR). The GTR saturation voltage is reduced, the current carrying density is large, but the driving current is large; the MOSFET driving power is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. IGBT combines the advantages of the above two devices, with low driving power and reduced saturation voltage. It is very suitable for use in converter systems with DC voltages of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields.
IGBT modules have the characteristics of energy saving, easy installation and maintenance, and stable heat dissipation. Currently, most of the modular products sold on the market are such modular products. Generally speaking, IGBT also refers to IGBT modules. With the development of concepts such as energy saving and environmental protection, Going forward, such products will become more and more common in the market.
IGBT is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. As a national strategic emerging industry, it is used in the fields of rail transportation, smart grids, aerospace, electric vehicles and new energy equipment. Very wide application.
The structure is as follows:
#The left side shows an N-channel enhancement type insulated gate bipolar transistor structure. The N-region is called is the source region, and the electrode attached to it is called the source (i.e., emitter E). The N base is called the drain region. The control area of the device is the gate area, and the electrode attached to it is called the gate (ie, gate G). A channel is formed close to the gate boundary. The P-type region (including P and P-regions) between the C and E poles (the channel is formed in this region) is called the subchannel region. The P region on the other side of the drain region is called the drain injection region (Drain injector). It is a unique functional region of IGBT. Together with the drain region and sub-channel region, it forms a PNP bipolar transistor and functions as an emitter. The drain injects holes to perform conductive modulation to reduce the on-state voltage of the device. The electrode attached to the drain injection region is called the drain (ie collector C).
The switching function of IGBT is to form a channel by applying a forward gate voltage to provide base current to the PNP (originally NPN) transistor to turn on the IGBT. On the contrary, adding reverse gate voltage eliminates the channel, cuts off the base current, and turns off the IGBT. The driving method of IGBT is basically the same as that of MOSFET. It only needs to control the input pole N-channel MOSFET, so it has high input impedance characteristics. After the MOSFET channel is formed, holes (minor carriers) are injected from the P base into the N-layer to modulate the conductance of the N-layer and reduce the resistance of the N-layer, so that the IGBT also has low voltage at high voltages. on-state voltage.
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