Samsung Electronics: 4nm node yield has stabilized, and mass production of HBM3E 12H memory will begin in the second quarter

According to news from this website on April 30, Samsung Electronics shared the technical information and future prospects of its semiconductor-related business in the first quarter financial report released today. This website summarizes it as follows:

System LSI

Samsung said that the recovery of the overall foundry business is relatively delayed, but the operational efficiency of the wafer factory has been improved to some extent.

In terms of technology, Samsung said that its 3nm and 2nm node technologies are developing smoothly and will complete the development of 2nm design infrastructure this quarter; while in terms of 4nm node, the yield rate is gradually improving. Stable.

Samsung is preparing for 4nm technology suitable for 3D IC, and plans to develop infrastructure suitable for mature nodes such as 14nm and 8nm to meet the needs of different applications.

Samsung confirmed that it still

plans to achieve mass production of second-generation 3nm technology in the second half of the year and increase the maturity of 2nm technology. Storage

Samsung said it has started mass production of HBM3E 8H (8-layer stacking) memory this month, and plans to start mass production within this quarter to provide 36GB single stack capacity Product

of HBM3E 12H. Samsung will continue to increase HBM supply to meet the needs of the generative AI market.

For conventional DDR5, Samsung’s 32Gb DDR5 based on the 1bnm (12nm) process will also be mass-produced this quarter. Samsung plans to achieve faster production ramp-up on this product

to enhance the company’s competitiveness in the high-density DDR5 module market.

Samsung’s 1bnm 32Gb DDR5 memory was released in September last year, with mass production scheduled for the end of 2023.

In the field of NAND flash memory, Samsung further clarified that the

QLC version of the 9th generation V-NAND will be mass-produced

in the third quarter.

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