Sources say Samsung Electronics and SK Hynix will commercialize stacked mobile memory after 2026

For mechanical hard drives or SATA solid-state drives, you will feel the increase in software running speed. If it is an NVME hard drive, you may not feel it. 1. Import the registry into the desktop and create a new text document, copy and paste the following content, save it as 1.reg, then right-click to merge and restart the computer. WindowsRegistryEditorVersion5.00[HKEY_LOCAL_MACHINE\SYSTEM\CurrentControlSet\Control\SessionManager\MemoryManagement]"DisablePagingExecutive"=d

According to news from this website on June 24, Korean media BusinessKorea reported that industry insiders revealed that SK Hynix published the latest research paper on 3D DRAM technology at the VLSI 2024 Summit held in Hawaii, USA from June 16 to 20. In this paper, SK Hynix reports that its five-layer stacked 3D DRAM memory yield has reached 56.1%, and the 3D DRAM in the experiment exhibits similar characteristics to current 2D DRAM. According to reports, unlike traditional DRAM, which arranges memory cells horizontally, 3D DRAM stacks cells vertically to achieve higher density in the same space. However, SK hynix

Recently, Xiaomi released a powerful high-end smartphone Xiaomi 14Pro, which not only has a stylish design, but also has internal and external black technology. The phone has top performance and excellent multitasking capabilities, allowing users to enjoy a fast and smooth mobile phone experience. However, performance will also be affected by memory. Many users want to know how to check the memory usage of Xiaomi 14Pro, so let’s take a look. How to check memory usage on Xiaomi Mi 14Pro? Introduction to how to check the memory usage of Xiaomi 14Pro. Open the [Application Management] button in [Settings] of Xiaomi 14Pro phone. To view the list of all installed apps, browse the list and find the app you want to view, click on it to enter the app details page. In the application details page

According to the report, Samsung Electronics executive Dae Woo Kim said that at the 2024 Korean Microelectronics and Packaging Society Annual Meeting, Samsung Electronics will complete the verification of the 16-layer hybrid bonding HBM memory technology. It is reported that this technology has passed technical verification. The report also stated that this technical verification will lay the foundation for the development of the memory market in the next few years. DaeWooKim said that Samsung Electronics has successfully manufactured a 16-layer stacked HBM3 memory based on hybrid bonding technology. The memory sample works normally. In the future, the 16-layer stacked hybrid bonding technology will be used for mass production of HBM4 memory. ▲Image source TheElec, same as below. Compared with the existing bonding process, hybrid bonding does not need to add bumps between DRAM memory layers, but directly connects the upper and lower layers copper to copper.

This site reported on March 21 that Micron held a conference call after releasing its quarterly financial report. At the conference, Micron CEO Sanjay Mehrotra said that compared to traditional memory, HBM consumes significantly more wafers. Micron said that when producing the same capacity at the same node, the current most advanced HBM3E memory consumes three times more wafers than standard DDR5, and it is expected that as performance improves and packaging complexity intensifies, in the future HBM4 This ratio will further increase. Referring to previous reports on this site, this high ratio is partly due to HBM’s low yield rate. HBM memory is stacked with multi-layer DRAM memory TSV connections. A problem with one layer means that the entire

This site reported on June 13 that Samsung Electronics reiterated at the Samsung Foundry Forum 2024 North America held on June 12, local time, that its SF1.4 process is expected to be mass-produced in 2027, countering previous media rumors. Samsung said its 1.4nm process preparations are progressing smoothly and it is expected to reach mass production milestones in both performance and yield in 2027. In addition, Samsung Electronics is actively researching advanced logic process technology in the post-1.4nm era through innovations in materials and structures to realize Samsung's commitment to continuously surpass Moore's Law. Samsung Electronics simultaneously confirmed that it still plans to mass-produce the second-generation 3nm process SF3 in the second half of 2024. In the more traditional FinFET transistor segment, Samsung Electronics plans to launch S

According to news from this website on May 6, Lexar launched the Ares Wings of War series DDR57600CL36 overclocking memory. The 16GBx2 set will be available for pre-sale at 0:00 on May 7 with a deposit of 50 yuan, and the price is 1,299 yuan. Lexar Wings of War memory uses Hynix A-die memory chips, supports Intel XMP3.0, and provides the following two overclocking presets: 7600MT/s: CL36-46-46-961.4V8000MT/s: CL38-48-49 -1001.45V In terms of heat dissipation, this memory set is equipped with a 1.8mm thick all-aluminum heat dissipation vest and is equipped with PMIC's exclusive thermal conductive silicone grease pad. The memory uses 8 high-brightness LED beads and supports 13 RGB lighting modes.

According to news from this website on September 3, Korean media etnews reported yesterday (local time) that Samsung Electronics and SK Hynix’s “HBM-like” stacked structure mobile memory products will be commercialized after 2026. Sources said that the two Korean memory giants regard stacked mobile memory as an important source of future revenue and plan to expand "HBM-like memory" to smartphones, tablets and laptops to provide power for end-side AI. According to previous reports on this site, Samsung Electronics’ product is called LPWide I/O memory, and SK Hynix calls this technology VFO. The two companies have used roughly the same technical route, which is to combine fan-out packaging and vertical channels. Samsung Electronics’ LPWide I/O memory has a bit width of 512