Sources say Samsung Electronics and SK Hynix will commercialize stacked mobile memory after 2026

According to news from this site on September 3, Korean media etnews reported yesterday (local time) that Samsung Electronics and SK Hynix’s “HBM-like” stacked structure mobile memory products will be commercialized after 2026.

Sources said that the two Korean memory giants regard stacked mobile memory as an important source of revenue in the future, and plan to expand "HBM-like memory" to smartphones, tablets and laptops to provide support for end-side AI. Provide motivation.

Based on previous reports on this site, Samsung Electronics’ product is called LP Wide I/O memory, and SK Hynix calls this technology VFO. The two companies have used roughly the same technical route, which is to combine fan-out packaging and vertical channels.

Samsung Electronics' LP Wide I/O memory has a bit width of 512 bits, which is 8 times that of existing LPDDR memory. It has 8 times the I/O density and 2.6 times the I/O bandwidth compared to traditional wire bonding. The memory will be technically ready in the first quarter of 2025 and ready for mass production in the second half of 2025 to mid-2026.

And SK Hynix’s VFO technology verification sample shortens the wire length to less than 1/4 of traditional memory and improves energy efficiency by 4.9%. While this solution results in an additional 1.4% heat dissipation, the package thickness is reduced by 27%.

The report pointed out that there is no conclusion yet on how these stacked mobile memories will be integrated with the processor. The solutions under discussion include 2.5D packaging similar to HBM or 3D vertical stacking.

People in the semiconductor packaging industry said that how mobile processors are designed and arranged will affect the configuration and connection methods of stacked mobile memory. This means that the new generation of mobile memory will be customized and supplied according to the needs of partners, completely changing mobile DRAM market landscape.

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