The Ministry of Industry and Information Technology plans to further clarify the power consumption requirements for photovoltaic manufacturing projects and guide companies to reduce projects that simply expand production capacity.

According to news from this website on July 9, the Ministry of Industry and Information Technology issued an announcement today to publicly solicit opinions on the "Photovoltaic Manufacturing Industry Standard Conditions (2024 Edition)" and "Photovoltaic Manufacturing Industry Standard Announcement Management Measures (2024 Edition)" (Draft for Comment).

1. Guide photovoltaic companies to reduce photovoltaic manufacturing projects that simply expand production capacity, strengthen technological innovation, improve product quality, reduce manufacturing cost. For new construction, renovation and expansion of photovoltaic manufacturing projects, the minimum capital ratio is 30%.

2. The power consumption of photovoltaic manufacturing projects should meet the following requirements:

• The restored power consumption of existing polysilicon projects is less than 46 kWh/kg, and the comprehensive power consumption is less than 60 kWh/kg; the restored power consumption of new construction and renovation and expansion projects The power consumption is less than 44 kWh/kg, and the comprehensive power consumption is less than 57 kWh/kg.
• The average comprehensive power consumption of existing silicon ingot projects is less than 7.5 kWh/kg, and that of new construction, renovation and expansion projects is less than 6.5 kWh/kg; if polycrystalline ingot furnaces are used to produce quasi-single crystal or high-efficiency polycrystalline products, the average comprehensive power consumption of the project The increase in power consumption must not exceed 0.5 kWh/kg.
• The average comprehensive power consumption of existing silicon ingot projects is less than 26 kWh/kg, and that of new construction, renovation and expansion projects is less than 23 kWh/kg.
• The average comprehensive power consumption of existing polycrystalline silicon wafer projects is less than 250,000 kWh/million pieces, and that of new construction and expansion projects is less than 200,000 kWh/million pieces; the average comprehensive power consumption of existing monocrystalline silicon wafer projects is less than 100,000 kWh/million pieces, new construction and renovation and expansion projects are less than 80,000 kWh/million pieces.
• The average comprehensive power consumption of P-type crystalline silicon battery projects is less than 50,000 kWh/MWp, and the average comprehensive power consumption of N-type crystalline silicon battery projects is less than 70,000 kWh/MWp.
• The average comprehensive power consumption of crystalline silicon module projects is less than 25,000 kilowatt hours/MWp, and the average power consumption of thin film module projects is less than 400,000 kilowatt hours/MWp.

3. The products of newly built, renovated and expanded enterprises and projects should meet the following requirements:

• Polysilicon meets the requirements of Grade 3 or above of "Electronic Grade Polysilicon" (GB/T12963) or "Fluidized Bed Granular Silicon" ( GB/T35307) requirements for premium products.
• The minority carrier lifetime of polycrystalline silicon wafers (including quasi-monocrystalline silicon wafers) is not less than 2.5μs, and the carbon and oxygen contents are less than 6ppma and 8ppma respectively; the minority carrier lifetime of P-type monocrystalline silicon wafers is not less than 90μs, and the minority carrier life of N-type monocrystalline silicon wafers is not less than 90μs The lifespan is not less than 1000μs, and the carbon and oxygen contents are less than 1ppma and 12ppma respectively. Among them, the minority carrier life of N-type monocrystalline silicon wafers for heterojunction batteries is not less than 700μs, and the carbon and oxygen contents are less than 1ppma and 14ppma respectively.
• The average photoelectric conversion efficiencies of polycrystalline silicon cells, P-type monocrystalline silicon cells and N-type monocrystalline silicon cells (bifacial cells are calculated based on front-side efficiency) are no less than 21.7%, 23.7% and 26% respectively.
• The average photoelectric conversion efficiencies of polycrystalline silicon modules, P-type monocrystalline silicon modules and N-type monocrystalline silicon modules (bifacial modules are calculated based on front-side efficiency) are no less than 19.7%, 21.8% and 23.1% respectively. The average photoelectric conversion efficiency of CIGS, CdTe and other thin film components is no less than 16%, 16.5% and 15% respectively.

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