Samsung releases 12nm DDR5 DRAM with 23% lower power consumption to help save energy

News on May 18, Samsung announced today that they have begun mass production of DDR5 using the 12nm process DRAM chip, this is an important development after Samsung first announced the development of 16Gb DDR5 DRAM in December last year.

According to Samsung's press release, the new generation of DDR5 chips has a 23% reduction in power consumption compared to the previous generation, while wafer productivity has increased by 20%. The new generation of chips is more power-efficient than the previous generation, and a single wafer can produce more chips, correspondingly improving production efficiency.

This 12nm process DDR5 The DRAM chip has a maximum speed of 7.2Gbps, which is equivalent to being able to process 60GB of data per second. According to ITBEAR Technology Information, this enables the chip to meet the needs of data centers, artificial intelligence and emerging computing applications.

Samsung said that 16Gb DDR5 DRAM's low power consumption will enable server and data center operators to reduce energy consumption and carbon footprint. In addition, the chip uses a new type of high-k material, which enables the chip to accurately distinguish differences in data signals, thus achieving the manufacturing of the 12nm node.

This series of innovations and breakthroughs will further consolidate Samsung’s leading position in the field of memory chips. Samsung is already mass-producing DDR5 using 12nm process An important step has been taken in DRAM, providing a more reliable and advanced solution for high speed and efficiency of data processing. As the market's demand for storage continues to grow, Samsung's new generation of DDR5 DRAM chips will play an important role in data centers and computing and contribute to the advancement of the industry.

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