Samsung starts mass production of its first batch of ninth-generation V-NAND flash memory

News from this site on April 23, Samsung Semiconductor announced today that its ninth-generation V-NAND 1Tb TLC product has begun mass production, which has a bit density that is approximately 50% higher than Samsung’s previous generation product, improve production efficiency through channel hole etching technology.

With Samsung’s smallest cell size and thinnest stack thickness, Samsung’s ninth-generation V-NAND’s bit density ratio The eighth generation V-NAND has improved by about 50%. The application of new technical features such as cell interference avoidance and cell life extension improves product quality and reliability, while the elimination of virtual channel holes significantly reduces the memory cell planar area.

In addition, Samsung’s “channel hole etching” technology creates electronic pathways by stacking mold layers, drilling holes simultaneously in a dual-layer structure to achieve Samsung’s highest number of unit layers, thereby maximizing Manufacturing productivity. As the number of cell layers increases, the ability to penetrate more cells becomes critical, which places requirements on more complex etching techniques.

The ninth-generation V-NAND is equipped with the next-generation NAND flash memory interface "Toggle 5.1", which can increase data input/output speed by 33%, up to 3.2 gigabits per second (Gbps). In addition to this new interface, Samsung also plans to solidify its position in the high-performance SSD market by expanding support for PCIe 5.0.

Based on Samsung’s progress in low-power design, the ninth-generation V-NAND also reduces power consumption by 10% compared to the previous generation.

Samsung has started mass production of its ninth-generation V-NAND 1Tb TLC products this month, and will start mass production of its fourth-generation quad-layer cell (QLC) ninth-generation V-NAND## in the second half of this year. #.

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