New headline: Samsung plans to start mass production of next-generation NAND memory in early 2024

Samsung Electronics today released news about the latest development progress of memory chips, and demonstrated their ambitions in the density limit of memory chips and the development of breakthrough materials

Lee Jung-bae, head of Samsung Electronics' storage business -Bae) said Samsung has produced products based on its ninth-generation V-NAND flash memory products and plans to start mass production early next year. In addition, the company is also developing industry-leading 11nm-level DRAM chips

Samsung is developing 3D stacking structures and new materials for DRAM. For NAND flash memory, Samsung is achieving the smallest cell size in the semiconductor industry by increasing the number of stacking layers and reducing the height

He said: "In the coming years In the era of DRAM below 10 nanometers and V-NAND chips with more than 1,000 layers, new structures and new materials have become very important."

The importance of Samsung Electronics to AI chips is self-evident. Currently, the company has begun producing HBM3 high-performance memory chips and is also developing the next generation HBM3E chip. Li Zhengpei said that Samsung hopes to produce customized HBM chips for customers. He said: "We are focusing on meeting the needs of new applications such as super-scale artificial intelligence. We will continue to advance the memory chip production line to meet the challenges of diverse needs and long lead times."

Samsung Electronics will The 2023 Samsung Memory Technology Day event will be held in Silicon Valley on October 20. At that time, the Korean chipmaker will launch some of the latest memory chip technologies and products. We will also bring you more reports

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